application low frequency power amplifier features low saturation voltage v ce(sat) = 0.1 v typ. (at i c = 1 a, i b = 50 ma) large current capacitance i c = 2 a to-92mod. 1. emitter 2. collector 3. base 3 2 1 table 1 absolute maximum ratings (ta = 25?) item symbol ratings unit collector to base voltage v cbo 80 v collector to emitter voltage v ceo 80 v emitter to base voltage v ebo 6v collector current i c 2a collector peak current ic(peak)* 3 a collector power dissipation p c 0.9 w junction temperature tj 150 ? storage temperature tstg ?5 to +150 ? note: * pw 10 ms, duty cycle 20 % 2SD2485 silicon npn epitaxial
table 2 electrical characteristics (ta = 25?) item symbol min typ max unit test conditions collector to base breakdown v (br)cbo 80 v i c = 10 ?, voltage i e = 0 collector to emitter breakdown v (br)ceo 80 v i c = 1 ma, voltage r be = emitter to base breakdown v (br)ebo 6 vi e = 10 ? voltage i c = 0 collector to base cutoff current i cbo 1.0 ? v cb = 65 v, i e = 0 collector to emitter cutoff current i ceo 5.0 ? v ce = 65 v, r be = emitter to base cutoff current i ebo 1.0 ? v eb = 5 v, i c = 0 dc current transfer ratio h fe1 120 300 v ce = 2 v, i c = 0.5 a dc current transfer ratio h fe2 40 v ce = 2 v, i c = 1.5 a collector to emitter saturation v ce(sat) 0.1 0.2 v i c =1 a voltage i b = 50 ma base to emitter saturation v be(sat) 1.2 v i c =1 a voltage i b = 50 ma 2SD2485
1.6 1.2 0.8 0.4 0 ambient temperature ta (?) collector power dissipation pc (w) 50 100 150 200 maximum collector power dissipation curve 2.0 1.6 1.2 0.8 0.4 0 collector to emitter voltage v (v) ce collector current i (a) c 0.4 0.8 1.2 1.6 2.0 typical output characteristics b i = 0 tc = 25 ? 20 ma 18 ma 6 ma 4 ma 2 ma 16 ma 12 ma 10 ma 14 ma 8 ma pc = 0.9 w collector to emitter voltage v (v) ce collector current i (a) c 0.1 0.3 1 3 10 30 100 10 3 1 0.3 0.1 0.03 0.01 area of safe operation 0.003 0.001 1 ms pw = 10 ms ic(peak) dc operation ta = 25 ? 1 shot pulse i (max) c 10 100 1000 dc current transfer ratio h fe collector current i (a) c 0.003 0.01 0.03 0.1 0.3 13 ta = ?5 ? 75 ? 25 ? dc current transfer ratio vs. collector current pulse test v = 2 v ce 300 30 2SD2485
3 collector to emitter saturation voltage ce(sat) v (v) collector current i (a) c 1 0.3 0.1 0.03 0.01 0.003 0.003 0.01 0.03 0.1 0.3 13 ce(sat) v be(sat) v base to emitter saturation voltage v (v) be(sat) pulse test i = 20 i c b saturation voltage vs. collector current ta=?5? ta=?5? 25? 75? 25? 75? 1000 gain bandwidth product f (mhz) t collector current i (a) c 0.03 0.01 0.3 0.1 0.3 13 300 100 30 10 1 3 gain bandwidth product vs. collector current pulse test v = 2 v ta = 25 ? ce collector to emitter saturation voltage ce(sat) v (v) 10 3 1 0.3 0.1 0.03 0.01 1 3 10 30 100 300 1000 c i = 2 a 1 a 0.5 a pulse test ta = 25 ? collector to emitter saturation voltage vs. base current base current i (ma) b collector output capacitance cob (pf) t collector to base voltage v (v) cb 100 10 1 1 10 100 i = 0 f = 1 mhz ta = 25 ? e collector output capacitance vs. collector to base voltage 30 3 330 2SD2485
collector current i (a) c 2.0 1.6 1.2 0.8 0.4 0 0.2 0.4 0.6 0.8 1.0 base to emitter voltage v (v) be typical transfer characteristics pulse test v = 2 v ta = 25 ? ce 2SD2485
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